2SK2968(F) Даташит - Toshiba
Номер в каталоге
2SK2968(F)
производитель
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Toshiba
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DC−DC Converter, Relay Drive and Motor Drive Applications
• Low drain−source ON resistance : RDS (ON) = 1.05 Ω (typ.)
• High forward transfer admittance : |Yfs| = 7.6 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
• Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Номер в каталоге
Компоненты Описание
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производитель
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 1998 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2004 )
Toshiba