datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  NEC => Renesas Technology  >>> 2SJ559-T2 PDF

2SJ559-T2 Даташит - NEC => Renesas Technology

2SJ559 image

Номер в каталоге
2SJ559-T2

Other PDF
  no available.

PDF
DOWNLOAD     

page
8 Pages

File Size
43.2 kB

производитель
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source.
The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.
   
FEATURES
• Can be driven by a 2.5 V power source.
• Low gate cut-off voltage.
   


Номер в каталоге
Компоненты Описание
View
производитель
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
PDF
NEC => Renesas Technology
P Channel Mos Type Field Effect Transistor For Ultra High Speed Switching
PDF
SANYO -> Panasonic
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]