2SJ553STL-E Даташит - Renesas Electronics
Номер в каталоге
2SJ553STL-E
производитель
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Renesas Electronics
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• Low on-resistance RDS(on)= 0.028Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
![2SJ553STL-E - Renesas Datasheet 2SJ553STL-E](//www.datasheetbank.com/detail-image1/Renesas/2SJ553L-E-DI1.png)
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Номер в каталоге
Компоненты Описание
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производитель
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Silicon P Channel MOS FET High Speed Power Switching
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Silicon P Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P-Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics