2SJ552 Даташит - Renesas Electronics
производитель
Renesas Electronics
Description
High speed power switching
Features
• Low on-resistance
RDS (on)= 0.042 Ωtyp.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
Page Link's:
1
2
3
4
5
6
7
8
9
Номер в каталоге
Компоненты Описание
View
производитель
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics