2SJ506(S) Даташит - Renesas Electronics
Номер в каталоге
2SJ506(S)
производитель
Renesas Electronics
* Low on-resistance
RDS(on)= 0.065 Ωtyp. (at V
GS = –10V, ID= –5A)
* Low drive current
* High speed switching
* 4V gate drive devices.
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Номер в каталоге
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производитель
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Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P-Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
