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2SJ461 Даташит - NEC => Renesas Technology

2SJ461 image

Номер в каталоге
2SJ461

Other PDF
  no available.

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page
6 Pages

File Size
275.1 kB

производитель
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SJ461 is a switching device which can be driven directly by a 2.5 V power source.
The MOS FET has excellent switching characteristic and is suitable for use as a high-speed switching device in digital circuits.


FEATURES
• Can be driven by a 2.5 V power source
• Not necessary to consider driving current because of it is high input
   impedance
• Possible to reduce the number of parts by omitting the bias resistor


Номер в каталоге
Компоненты Описание
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производитель
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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NEC => Renesas Technology
P Channel Mos Type Field Effect Transistor For Ultra High Speed Switching
PDF
SANYO -> Panasonic
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

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