2SD684 Даташит - Inchange Semiconductor
производитель
![Iscsemi](/logo/Iscsemi.png)
Inchange Semiconductor
![Iscsemi](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 300V(Min)
·High DC Current Gain-: hFE= 1500(Min.)@IC= 2A
·Low Collector-Emitter Saturation Voltage-: VCE(sat)= 2.0V(Max) @IC= 4A
APPLICATIONS
·Igniter applications.
·High voltage switching applications.
Номер в каталоге
Компоненты Описание
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производитель
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.