2SD2128 Даташит - Inchange Semiconductor
производитель
![Iscsemi](/logo/Iscsemi.png)
Inchange Semiconductor
![Iscsemi](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)
·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.2V(Max) @IC= 1.5A
·High DC Current Gain : hFE= 1000(Min) @ IC= 1.5A, VCE= 3V
APPLICATIONS
·Designed for low frequency power amplifier applications
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производитель
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.