2SC5199 Даташит - Toshiba
производитель
Toshiba
Power Amplifier Applications
• High breakdown voltage: VCEO = 160 V (min)
• Complementary to 2SA1942
• Suitable for use in 80-W
high fidelity audio amplifier’s output stage.
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производитель
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TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
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TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2005 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
