datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  New Jersey Semiconductor  >>> 2SB1430 PDF

2SB1430 Даташит - New Jersey Semiconductor

2SB1430 image

Номер в каталоге
2SB1430

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
2 Pages

File Size
86.1 kB

производитель
NJSEMI
New Jersey Semiconductor NJSEMI

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= -100V(Min)
• High DC Current Gain-
   : hFE= 2000(Min)@ (VCE= -2V, IC= -2A)
• Low Collector Saturation Voltage-
   : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA) 


APPLICATIONS
• Designed for low-frequency power amplifiers and low speed switching applications.


Номер в каталоге
Компоненты Описание
View
производитель
Silicon PNP Darlington Power Transistor
PDF
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
PDF
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
PDF
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
PDF
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
PDF
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
PDF
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
PDF
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
PDF
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
PDF
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
PDF
Inchange Semiconductor

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]