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2SB1430 Даташит - Inchange Semiconductor

2SB1430 image

Номер в каталоге
2SB1430

Компоненты Описание

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2 Pages

File Size
80.2 kB

производитель
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= -100V(Min)
·High DC Current Gain-
   : hFE= 2000(Min)@ (VCE= -2V, IC= -2A)
·Low Collector Saturation Voltage-
   : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA) B


APPLICATIONS
·Designed for low-frequency power amplifiers and low speed switching applications.

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