2SB1430 Даташит - Inchange Semiconductor
производитель
![Iscsemi](/logo/Iscsemi.png)
Inchange Semiconductor
![Iscsemi](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -2V, IC= -2A)
·Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA) B
APPLICATIONS
·Designed for low-frequency power amplifiers and low speed switching applications.
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Компоненты Описание
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производитель
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Silicon PNP Darlington Power Transistor
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Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor