Darlington Silicon Power Transistors

. . . designed for general–purpose amplifier and low speed switching applications.

• High DC Current Gain —
    hFE = 3500 (Typ) @ IC = 4 Adc
• Collector–Emitter Sustaining Voltage — @ 200 mAdc
    VCEO(sus) = 60 Vdc (Min) — 2N6667
                       = 80 Vdc (Min) — 2N6668
• Low Collector–Emitter Saturation Voltage —
    VCE(sat) = 2 Vdc (Max)@ IC = 5 Adc
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
• TO–220AB Compact Package
• Complementary to 2N6387, 2N6388