2N6668 Даташит - Inchange Semiconductor
производитель
![Iscsemi](/logo/Iscsemi.png)
Inchange Semiconductor
![Iscsemi](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -80V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -5A
·Complement to Type 2N6388
APPLICATIONS
·Designed for general purpose amplifier and low speed switching applications.
Номер в каталоге
Компоненты Описание
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производитель
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Silicon PNP Darlington Power Transistor
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Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor