RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment.

FEATUREs
• Characterized for Operation from 136 to 520 MHz
• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Integrated ESD Protection
• Integrated Stability Enhancements
• Wideband — Full Power Across the Band:
    − 136--174 MHz
    − 380--450 MHz
    − 450--520 MHz
• 225°C Capable Plastic Package
• Exceptional Thermal Performance
• High Linearity for: TETRA, SSB, LTE
• Cost--effective Over--molded Plastic Packaging
• In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.

Typical Applications
• Output Stage VHF Band Mobile Radio
• Output Stage UHF Band Mobile Radio