1N4153 Даташит - New Jersey Semiconductor
производитель
New Jersey Semiconductor
ULTRA HIGH SPEED SILICON PLANAR EPITAXIAL DIODES
• C ... 4pF @ VR = 0, f = 1.0 MHz
• trr ... 2.0 ns @ IF = 10 mA, VR = -6.0 V, RL = 100 Ω
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