Номер в каталоге
19N10
Компоненты Описание
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6 Pages
File Size
226.3 kB
DESCRIPTION
The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
FEATURES
* RDS(ON)= 0.1Ω @VGS= 10 V
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( CRSS= typical 32pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness