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STP57N65M5 Даташит - STMicroelectronics

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STP57N65M5 N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFET in I²PAK, TO-220, TO-220FP and D²PAK packages ST-Microelectronics
STMicroelectronics ST-Microelectronics
STP57N65M5 PDF Даташит : STP57N65M5 pdf   
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Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

■ Worldwide best RDS(on)*area amongst the silicon based devices
■ Higher VDSS rating, high dv/dt capability
■ Excellent switching performance
■ Easy to drive, 100% avalanche tested

Applications
■ Switching applications

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