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Номер в каталогеОписание (Функция)производитель
MBR7030WT SWITCHMODE Power Rectifier ONSEMI
ON Semiconductor ONSEMI
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MBR7030WT Datasheet PDF : MBR7030WT pdf   
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The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features:

• Dual Diode Construction − Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating
• 30 Volt Blocking Voltage
• Low Forward Voltage Drop
• Guardring for Stress Protection and High dv/dt Capability
• 150°C Operating Junction Temperature

 

В связи с паспорте перечисляет MBR7030WT

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