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ONSEMI
ON Semiconductor
Компоненты Описание : Schottky barrier diode for Mixer and Detector

Schottky barrier diode for Mixer and Detector

This Schottky barrier diode is designed to realize compact and efficient designs. Two Schottky barrier diodes are incorporated in one SC-59 package. The use of dual Schottky barrier diodes can reduce both system cost and board space. This Schottky barrier diode is AEC-Q101 qualified and PPAP capable for automotive applications.

Features
• Series connection of 2 elements in a small-sized package
• Small Interterminal Capacitance (C = 0.69 pF typ)
• Small Forward Voltage (VF = 0.23 V max)
• Pb-Free, Halogen Free and RoHS compliance
• AEC-Q101 qualified and PPAP capable

Typical Applications
• Level Detector for Radio

Компоненты Описание : SURMOUNT™ Low and Medium & High barrier Silicon Schottky diodes: Anti-Parallel Pair

Description and Applications
The MA4E2508 SurMountä Anti-Parallel diode Series are Silicon Low, Medium & High barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The SurMount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes.
The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300°C.
The “ 0502 ” outline allows for Surface Mount placement and multi- functional polarity orientations.
The MA4E2508 Family of SurMount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with solder.

Features
● Extremely Low Parasitic Capitance and Inductance
● Surface Mountable in Microwave Circuits, No Wirebonds Required
● Rugged HMIC Construction with Polyimide Scratch Protection
● Reliable, Multilayer Metalization with a Diffusion
barrier, 100% Stabilization Bake (300°C, 16 hours)
● Lower Susceptibility to ESD Damage

HP
HP => Agilent Technologies
Компоненты Описание : Low barrier Schottky diode Detectors

Low barrier Schottky diode Detectors

Agilent offers a complete family of high performance Low barrier Schottky diode Detectors which cover the 10 MHz to 26.5 GHz frequency range. These general purpose components are widely used for CW and pulsed power detection, leveling of sweepers, and frequencyresponse testing of other microwave components. These detectors do not require a dc bias and can be used with common oscilloscopes, thus their simplicity of operation and excellent broadband performance make them useful measurement accessories.
These detectors use a Low-barrier Schottky diode (LBSD), specially fabricated with low origin resistance and low junction capacitance. This results in improved broadband flatness and SWR over point-contact diode detectors, thus yielding more accurate measurements. These detectors also offer very good ruggedness and burnout protection. As with all Agilent detectors, these models integrate the diode with the other circuit elements thus minimizing stray reactances and optimizing broadband performance. For economical field repair, replaceable detector modules are available.

• Excellent broadband flatness
• Low broadband SWR
• High burnout protection
• Environmentally rugged
• Field replaceable diode elements

Skyworks
Skyworks Solutions
Компоненты Описание : Schottky diode Quad Mixer Chips Supplied on Film Frame

Description
The Skyworks SMS392x-099 family of Si Schottky diodes are configured as ring quads intended for use in double-balanced mixers. Each ring quad die is comprised of four Schottky junctions, connected anode to cathode. There are three barrier heights available: SMS3926 is composed of low-barrier diodes, which can be driven with low-power local oscillator signals; SMS3927 is composed of medium-barrier diodes, for applications in which moderate-power local oscillator signals are available; and, SMS3928 is composed of high-barrier diodes for applications that require very low distortion performance and have higher local oscillator power available. These ring quads are 100% tested, sawn and supplied on film frame in wafer quantities.

Features
● Designed for high-performance, double-balanced mixers
● Three barrier heights available
Schottky diodes supplied 100% tested, sawn, mounted on film frame
● Low cost
● Available lead (Pb)-free, RoHS-compliant, and Green

Номер в каталоге(s) : NSVR201MX NSVR201MXT5G NSVR201MX NSVR201MXT5G
ONSEMI
ON Semiconductor
Компоненты Описание : Schottky barrier diode for Mixer and Detector

Schottky barrier diode for Mixer and Detector

Automotive Schottky barrier diode designed for compact and efficient designs. AEC-Q101 qualified Schottky barrier diode and PPAP capable suitable for automotive applications.

Features
• Small Interterminal Capacitance
• Less Parasitic Components
• Small Forward Voltage
• Small-sized Package
• Pb-Free, Halogen Free and RoHS compliance
• AEC-Q101 qualified and PPAP capable

Typical Applications
• Microwave and Milliwave Mixer
• Microwave and Milliwave Detector

Компоненты Описание : MOSFET – Power, P-Channel, Schottky diode, ChipFET, FETKY, Schottky barrier diode

Power MOSFET and Schottky diode
−20 V, FETKY, P−Channel, −4.4 A, with
4.1 A Schottky barrier diode, ChipFET

Features
• Leadless SMD Package Featuring a MOSFET and Schottky diode
• 40% Smaller than TSOP−6 Package
• Leadless SMD Package Provides Great Thermal Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Trench P−Channel for Low On Resistance
• Ultra Low VF Schottky
• Pb−Free Packages are Available

Applications
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products

Компоненты Описание : MOSFET – Power, Single, P-Channel, Schottky diode, ChipFET, Schottky barrier -20 V, -3.0 A, 3.0 A

Power MOSFET and Schottky diode
−20 V, −3.0 A, Single P−Channel with
3.0 A Schottky barrier diode, ChipFET

Features
• Leadless SMD Package Featuring a MOSFET and Schottky diode
• 40% Smaller than TSOP−6 Package with Similar Thermal
   Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Ultra Low VF Schottky
• Pb−Free Package is Available

Applications
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products

YINT
Shanghai Yint Electronic Co., Ltd.
Компоненты Описание : Schottky barrier RECTIFIERS

Description
Schottky (Schottky) diode is also known as Schottky barrier diode (SBR),) has been in the power supply industry for 25 years, it is a low-power, ultra-high speed semiconductor devices, widely used in switching power supplies, frequency converters, Driver circuit, such as high frequency, low voltage, high current rectifier diode, continuous current diode, protection diode, or microwave communication circuit as rectifier diode, small signal detector diode.

Features
● Compact package, easy to install
● Efficient overvoltage protection device
● Ultra-low forward pressure drop
● Ideal products for High Frequency Circuits
● Comply with relevant welding international standard MIL-STD-202

YINT
Shanghai Yint Electronic Co., Ltd.
Компоненты Описание : Schottky barrier RECTIFIERS

Description
Schottky (Schottky) diode is also known as Schottky barrier diode (SBR),) has been in the power supply industry for 25 years, it is a low-power, ultra-high speed semiconductor devices, widely used in switching power supplies, frequency converters, Driver circuit, such as high frequency, low voltage, high current rectifier diode, continuous current diode, protection diode, or microwave communication circuit as rectifier diode, small signal detector diode.

Features
● Compact package, easy to install
● Efficient overvoltage protection device
● Ultra-low forward pressure drop
● Ideal products for High Frequency Circuits
● Comply with relevant welding international standard MIL-STD-202

Номер в каталоге(s) : WNM2310 WNM2310-6/TR
WILLSEMI
Will Semiconductor Ltd.
Компоненты Описание : Integrated N-Channel Power MOSFET And Schottky barrier diode

Descriptions
The WNM2310 is N-Channel enhancement MOS Field Effect Transistor and Schottky diode as a single package for switching. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. Standard Product WNM2310 is Pb-free and Halogen-free.

Features
● Small package SOT-563B
● Featuring a MOSFET and Schottky barrier
   diode
● Excellent ON resistance for higher DC current
● Low leakage current Schottky barrier diode

Applications
● Driver: Relay, Solenoid, Lamps,Hammers etc.
● Power supply converters circuit
● Load/Power Switching for potable device

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