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Номер в каталоге(s) : TSAL7600 TSAL7600 TSAL7600 TSAL7600
Vishay
Vishay Semiconductors
Компоненты Описание : High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1¾) Package

Description
TSAL7600 is a high efficiency Infrared Emitting Diode in GaAlAs on GaAs technology, molded in clear plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.

Features
● Extra high radiant power and radiant intensity
● High reliability
● Low forward voltage
● Suitable for high pulse current operation
● Standard T–1¾ (ø 5 mm) package
● Angle of half intensity ϕ = ± 30°
● Peak wavelength λp = 940 nm
● Good spectral matching to Si photodetectors

Applications
    Infrared remote control units with high power requirements
    Free air transmission systems
    Infrared source for optical counters and card readers
    IR source for smoke detectors

Номер в каталоге(s) : TSMS3700 TSMS3700 TSMS3700-GS08 TSMS3700-GS18
Vishay
Vishay Semiconductors
Компоненты Описание : GaAs Infrared Emitting Diode in SMT Package

Description
TSMS3700 is a standard GaAs Infrared Emitting Diode in a miniature PL–CC–2 package.
Its flat window provides a wide aperture, making it ideal for use with external optics.
The Diode is case compatible to the TEMT3700 phototransistor, allowing the user to assemble his own optical interrupters.

Features
● SMT IRED with high radiant power
● Low forward voltage
● Compatible with automatic placement equipment
● EIA and ICE standard package
● Suitable for Infrared, vapor phase and wavesolder process
● Available in 8 mm tape
● Suitable for DC and high pulse current operation
● Wide angle of half intensity ϕ = ± 60°
● Peak wavelength λp = 950 nm
● High reliability
● Matching to TEMT3700 phototransistor

Applications
    Infrared source in tactile keyboards
    IR Diode in low space applications
    Matching with phototransistor TEMT3700 in reflective sensors
    PCB mounted Infrared sensors
    Infrared emitter for miniature light barriers

Номер в каталоге(s) : TSMS3700
Vitesse
Vitesse Semiconductor
Компоненты Описание : GaAs Infrared Emitting Diode in SMT Package

Description
TSMS3700 is a standard GaAs Infrared Emitting Diode in a miniature PL–CC–2 package.
Its flat window provides a wide aperture, making it ideal for use with external optics.
The Diode is case compatible to the TEMT3700 phototransistor, allowing the user to assemble his own optical interrupters.
   
Features
● SMT IRED with high radiant power
● Low forward voltage
● Compatible with automatic placement equipment
● EIA and ICE standard package
● Suitable for Infrared, vapor phase and wavesolder process
● Available in 8 mm tape
● Suitable for DC and high pulse current operation
● Wide angle of half intensity ϕ = ± 60°
● Peak wavelength λp = 950 nm
● High reliability
● Matching to TEMT3700 phototransistor
   
Applications
    Infrared source in tactile keyboards
    IR Diode in low space applications
    Matching with phototransistor TEMT3700 in reflective sensors
    PCB mounted Infrared sensors
    Infrared emitter for miniature light barriers
   

Номер в каталоге(s) : TSML3700
Vishay
Vishay Semiconductors
Компоненты Описание : GaAs/GaAlAs Infrared Emitting Diode in SMT Package

Description
TSML3700 is an Infrared Emitting Diode in GaAlAs on GaAs technology in a miniature PL–CC–2 SMD package.
It has been designed to meet the increasing demand on optoelectronic devices for surface mounting.
The package consists of a lead frame which is surrounded with a white thermoplast. The reflector inside the package is filled up with clear epoxy.
This new package achieves an improvement of 100% in radiant intensity, compared with the old SOT–23 package.

Features
● SMT IRED with extra high radiant power
● Low forward voltage
● Compatible with automatic placement equipment
● EIA and ICE standard package
● Suitable for Infrared, vapor phase and wave-solder process
● Available in 8 mm tape
● Suitable for pulse current operation
● Extra wide angle of half intensity ϕ = ± 60
● Peak wavelength p = 925 nm
● High reliability
● Matching to TEMT3700 phototransistor

Applications
    Infrared source in tactile keyboards
    IR Diode in low space applications
    Matching with phototransistor TEMT3700 in reflective sensors
    High performance PCB mounted Infrared sensors
    High power Infrared emitter for miniature light barriers

Номер в каталоге(s) : TSAL7400 TSAL7400 TSAL7400
Vishay
Vishay Semiconductors
Компоненты Описание : High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Description
TSAL7400 is a high efficiency Infrared Emitting Diode in GaAlAs on GaAs technology, molded in clear plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.

Features
● Extra high radiant power and radiant intensity
● High reliability
● Low forward voltage
● Suitable for high pulse current operation
● Standard T–1 (ø 5 mm) package
● Angle of half intensity ϕ = ± 25°
● Peak wavelength λp = 940 nm
● Good spectral matching to Si photodetectors

Applications
    Infrared remote control units with high power requirements
    Free air transmission systems
    Infrared source for optical counters and card readers
    IR source for smoke detectors

Номер в каталоге(s) : TSAL7300 TSAL7300 TSAL7300 TSAL7300
Vishay
Vishay Semiconductors
Компоненты Описание : High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Description
TSAL7300 is a high efficiency Infrared Emitting Diode in GaAlAs on GaAs technology, molded in clear, plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.

Features
• Extra high radiant power and radiant intensity
• Low forward voltage
• Suitable for high pulse current operation
• Standard T–1¾(ø 5 mm) package
• Angle of half intensity ϕ = ± 22°
• Peak wavelength λp = 940 nm
• High reliability
• Good spectral matching to Si photodetectors

Applications
    Infrared remote control units with high power requirements
    Free air transmission systems
    Infrared source for optical counters and card readers
    IR source for smoke detectors

Номер в каталоге(s) : TSAL5100 TSAL5100 TSAL5100
Vishay
Vishay Semiconductors
Компоненты Описание : High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Description
TSAL5100 is a high efficiency Infrared Emitting Diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.

Features
• Extra high radiant power and radiant intensity
• High reliability
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity ϕ = ± 10°
• Peak wavelength λp = 940 nm
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Applications
    Infrared remote control units with high power requirements
    Free air transmission systems
    Infrared source for optical counters and card readers
    IR source for smoke detectors

Номер в каталоге(s) : MIE-534A4
Unity
Unity Opto Technology
Компоненты Описание : AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE Infrared Emitting Diode

AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE Infrared Emitting Diode

Description
The MIE-534A4 is an Infrared Emitting Diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package.

Features
 High radiant power and high radiant intensity
 Suitable for DC and high pulse current operation
 Standard T-1 3/4 ( f 5mm ) package, radiant angle : 30°
 Peak wavelength lp = 940 nm
 Good spectral matching to si-photodetector

Номер в каталоге(s) : SEP8506-003
HONEYWELL-ACC
Honeywell Accelerometers
Компоненты Описание : SEP Series GaAs Infrared Emitting Diode, Side-Emitting Plastic Package

Description
The SEP8506 is a gallium arsenide Infrared Emitting Diode molded in a side-Emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package.

Features
● Side-Emitting plastic package
● 50 ° (nominal) beam angle
● 935 nm wavelength
● Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

Номер в каталоге(s) : SEP8506-001
HONEYWELL-ACC
Honeywell Accelerometers
Компоненты Описание : SEP Series GaAs Infrared Emitting Diode, Side-Emitting Plastic Package

Description
The SEP8506 is a gallium arsenide Infrared Emitting Diode molded in a side-Emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package.

Features
● Side-Emitting plastic package
● 50 ° (nominal) beam angle
● 935 nm wavelength
● Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

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