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Компоненты Описание : 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

PRODUCT DESCRIPTION
The SST39LF512/010/020/040 and SST39VF512/010/020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.

Номер в каталоге(s) : G103 PDI-G103
ETC
Unspecified
Компоненты Описание : GaAlAs (880 nm peak) Photodiode

[PHOTONIC DETECTORS INC.]

DESCRIPTION
The PDI-G103 is a GaAlAs LPE processed Photodiode, with a spectral peak at 880 nm. Matched to the emission spectrum of GaAlAs, 880 nm LEDs. This detector is immune to other ambient light. Packaged in an
isolated hermetic TO-46 with a flat window.

FEATURES
Matched to NIR LEDs
Daylight filtered
Low cost
60 A/W at 880 nm

APPLICATIONS
I.R. LED sensor
I.R. links
Industrial controls
I.R. proximity sensor

Компоненты Описание : GaAlAs Infrared Emitters (880 nm)

GaAlAs Infrared Emitters (880 nm)

Features
• Very highly efficient GaAlAs-LED
• High reliability
• UL version available
• Spectral match with silicon photodetectors
• Available on tape and reel (in Ammopack)
• Available in bins
•SFH 484: Same package as LD 274
•SFH 485: Same package as SFH 300, SFH 203

Applications
• IR remote controls
• Smoke detectors
• Sensor technology
• Discrete interrupters

Компоненты Описание : HCMOS, 14 pin DIL compatible, MHz Range

DESCRIPTION
EM39GT series TCXOs are packaged in a conventional through hole-mounted package compatible with 14 pin DIL. With squarewave (CMOS) output, tolerances are available from ±1.0ppm over -30° to +75°C. The part has a 0.01mF decoupling capacitor built in.

 • Package pin compatible with 14 pin DIL
 • Wide frequency range: 1.25MHz to 156.0MHz
 • Supply voltage 2.8, 3.0, 3.3 or 5.0 Volts
 • Frequency stability from ±1ppm over -30 to +75°C
 • RoHS compliant

Компоненты Описание : HCMOS, 14 pin DIL compatible, MHz Range

DESCRIPTION
EM39T series TCXOs are packaged in a conventional through hole mounted package compatible with 14 pin DIL. With squarewave (CMOS) output, tolerances are available from ±1.0ppm over -30° to +75°C. The part has a 0.01mF decoupling capacitor built in.

 • Package pin compatible with 14 pin DIL
 • Wide frequency range: 1.25MHz to 156.0MHz
 • Supply voltage 2.8, 3.0, 3.3 or 5.0 Volts
 • Frequency stability from ±1ppm over -30 to +75°C

Номер в каталоге(s) : TSSF4500 TSSF4500 TSSF4500
Vishay
Vishay Semiconductors
Компоненты Описание : High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

Description
TSSF4500 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package with spherical side view lens.
The new technology combines the high speed of DH– GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology.

Features
● High modulation bandwidth (10 MHz)
● Extra high radiant power and high radiant intensity
● Low forward voltage
● Suitable for high pulse current operation
● Angle of half intensity ϕ = ± 22
peak wavelength p = 870 nm
● High reliability
● Good spectral matching to Si photodetectors

Applications
    Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements.
    TSSF4500 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK – coded, 450 kHz or 1.3 MHz).

Номер в каталоге(s) : TSFF5200 TSFF5200
Vishay
Vishay Semiconductors
Компоненты Описание : High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description
TSFF5200 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package.
The new technology combines the high speed of DH–GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology.

Features
● High modulation bandwidth (35 MHz)
● Extra high radiant power and radiant intensity
● Low forward voltage
● Suitable for high pulse current operation
● Standard T–1 (ø 5 mm) package
● Angle of half intensity ϕ = ± 10°
peak wavelength λp = 870 nm
● High reliability
● Good spectral matching to Si photodetectors

Applications
    IInfrared video data transmission between Camcorder and TV set.
    Free air data transmission systems with high modulation frequencies or high data transmission rate requirements.

Номер в каталоге(s) : UF-880 UF880
Panasonic
Panasonic Corporation
Компоненты Описание : Panafax UF-880

The Panafax UF-880 For Those Who Cant Wait For The Future

Remember the anticipation felt when the fax industry introduced the 14.4 kbps modem at the beginning of the ’90s? Remember the inconceivable vision of cutting transmission time in half– while savinga bundle of money on communication costs? Get ready to experience the future head-on with the super-fast V.34 kbps modemand new JBIG compression protocolof the Panafax UF-880!

More Smart Business Features Include:
• 140-station Autodialer/Redialer
• ITU-T Super Fine Resolution
• ITU-T Error correction Mode (ECM)
• Substitute Reception
• Department Codes (up to 24 codes)
• Multiple Logos (up to 25)
• Automatic Memory Retransmission
• Priority Transmission Reservation
• Multi-Station Transmission
   (up to 172 stations)
• Confidential Mailbox (up to 10 boxes)
• Deferred Transmission (up to 30 timers)
• Automatic/Fixed Print Reduction
• Overlapping Print
• Automatic Fax Cover Sheet
• Journal View on LCD
• Multiple Copy with sorting
   (up to 99 copies)
• 64-Level Halftone
   with Auto Picture/Text Recognition
• V.24/Encryption Interface
• Check & Call

Компоненты Описание : High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

DESCRIPTION
The TSHA550. series are infrared, 875 nm emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
• Infrared remote control and free air data transmission systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass

Компоненты Описание : PCS and WLAN Omni Antennas

Description
M/A-COM’s Omni antennas are vertically polarized collinear arrays utilizing a patented printed circuit technology for the radiating elements. These rugged antennas are housed in UV stable ultrasonically bonded polycarbonate radomes. Installation is easy due to the small footprint, mounting system, and our convenient pigtail connection. Our Omni antennas are groundplane independent and can be mounted in any direction. Mounting bracket included.

Features
● Light Weight - Slim Profile
● Patented Printed Circuit Technology
● Watertight Ultrasonic and O-Ring Sealed
● Groundplane Independent
● Stainless Steel Hardware
● Multiple pigtail lengths, radome colors and connector options available

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