FDU6680 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDU6680 Datasheet PDF : 6 Pages
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Typical Characteristics
100
VGS = 10.0V
6.0V
80
4.5V
5.0V
4.0V
60
3.5V
40
20
3.0V
0
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.6
ID = 12A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature
1.8
VGS = 3.5V
1.6
1.4
4.0V
4.5V
5.0V
1.2
6.0V
10.0V
1
0.8
0
20
40
60
80
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.03
0.025
ID = 6A
0.02
0.015
0.01
TA = 25oC
TA = 125oC
0.005
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
90
VDS = 5V
75
60
45
TA =-55oC
125oC
25oC
30
15
0
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
1000
100
VGS = 0V
10
TA = 125oC
1
0.1
25oC
-55oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6680/FDU6680 Rev. C1(W)
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