NE72218 Просмотр технического описания (PDF) - NEC => Renesas Technology

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NE72218

C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET

NEC => Renesas Technology 

NE72218

ELECTRICAL CHARACTERISTICS (TA = +25 °C)

Parameter

Gate to Source Leak Current

Saturated Drain Current

Gate to Source Cutoff Voltage

Transconductance

Phase Noise

Power Gain

Output Power at 1 dB Gain

Compression Point

Symbol

Test Conditions

IGSO VGS = −5 V

IDSS VDS = 3 V, VGS = 0 V

VGS (off) VDS = 3 V, ID = 100 µA

gm VDS = 3 V, ID = 30 mA

PN VDS = 3 V, ID = 30 mA, f = 11 GHz,

100 kHz offset

VDS = 3 V, ID = 30 mA, f = 11 GHz,

10 kHz offset

GS VDS = 3 V, ID = 30 mA, f = 12 GHz

PO (1 dB) VDS = 3 V, ID = 30 mA, f = 12 GHz

IDSS CLASSIFICATION

Rank

57

58

59

IDSS (mA)

30 to 120

65 to 120

30 to 75

Marking

V57

V58

V59

MIN.

−

30

−0.5

20

−

TYP.

1.0

60

−2.0

45

−110

MAX.

10

120

−4.0

−

−

Unit

µA

mA

V

mS

dBc/Hz

−

−90

−

dBc/Hz

−

4.5

−

dB

−

15.0

−

dBm

2

Data Sheet P12750EJ3V0DS00

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