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STP8NK80Z

N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STP8NK80Z - STP8NK80ZFP - STW8NK80Z

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

ISDM(1) Source-drain current (pulsed)

VSD(2) Forward on voltage

ISD = 6.2 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 6.2 A, di/dt = 100 A/µs

VDD = 50 V, Tj = 150°C

(see Figure 23)

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Pulse width limited by safe operating area

6.2 A

24.8 A

1.6 V

460

ns

2990

nC

13

A

Table 8. Gate-source zener diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

BVGSO(1) Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30

V

1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

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