B12NM50FD(2002) Просмотр технического описания (PDF) - STMicroelectronics
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B12NM50FD
(Rev.:2002)
(Rev.:2002)
STMicroelectronics
B12NM50FD Datasheet PDF : 14 Pages
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STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
500
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250µA
3
4
5
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 6A
0.32
0.4
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
RG
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 6 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Test Conditions
VDD = 250 V, ID = 6 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 400V, ID = 12 A,
VGS = 10V
Min.
Typ.
9.8
1027
205
24
3.7
Typ.
19
10
27.5
8
12
Max.
Max.
38.5
SWITCHING OFF
Symbol
Parameter
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 400 V, ID = 12 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
39
18
29
Max.
Unit
V
µA
µA
nA
V
Ω
Unit
S
pF
pF
pF
Ω
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 12 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100A/µs
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
224
1.3
12
Max.
12
48
1.5
Unit
A
A
V
ns
µC
A
3/14
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