B5NK50Z Просмотр технического описания (PDF) - STMicroelectronics
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B5NK50Z
STMicroelectronics
B5NK50Z Datasheet PDF : 17 Pages
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STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
STP5NK50Z
STB5NK50Z/-1
STP5NK50ZFP
STD5NK50Z
STD5NK50Z-1
VDS
Drain-source Voltage (VGS = 0)
500
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
500
VGS
Gate- source Voltage
± 30
ID
Drain Current (continuous) at TC = 25°C
4.4
4.4 (*)
4.4
ID
Drain Current (continuous) at TC = 100°C
2.7
2.7 (*)
2.7
IDM ( ) Drain Current (pulsed)
17.6
17.6 (*)
17.6
PTOT
Total Dissipation at TC = 25°C
70
25
70
Derating Factor
0.56
0.2
0.56
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
3000
dv/dt (1) Peak Diode Recovery voltage slope
4.5
VISO
Insulation Withstand Voltage (DC)
-
2500
-
Tj
Operating Junction Temperature
Tstg
Storage Temperature
-55 to 150
-55 to 150
( ) Pulse width limited by safe operating area
(1) ISD ≤4.4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220
I2PAK/D2PAK TO-220FP DPAK
Rthj-case Thermal Resistance Junction-case Max
1.78
5
1.78
Rthj-amb Thermal Resistance Junction-ambient Max
62.5
Tl
Maximum Lead Temperature For Soldering Purpose
300
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C
°C/W
°C/W
°C
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
4.4
130
Unit
A
mJ
Table 6: Gate-Source Zener Diode
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min. Typ. Max. Unit
30
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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