STP80NS04Z Просмотр технического описания (PDF) - STMicroelectronics
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STP80NS04Z
STMicroelectronics
STP80NS04Z Datasheet PDF : 8 Pages
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STP80NS04Z
THERMAL DATA
Rthj-case
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-case
Typ
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
0 .9 4
0 .6 5
6 2. 5
0. 5
3 00
oC/W
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 30 V)
Max Value
80
500
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
VC L AMP
IDSS
IGSS
VGSS
P ar am et e r
Test Conditions
Drain-Gate Breakdown
V ol ta ge
Zero Gate Voltage
Drain Current (VGS = 0)
Gate-body Leakage
Current (VDS = 0)
ID = 1 mA VGS = 0
-40 < Tj < 175 oC
VDS = 16 V
Tj = 175 oC
VGS = ± 10 V
VGS = ± 16 V
Tj = 175 oC
Tj = 175 oC
G at e-Sou rc e
Breakdown Voltage
IG = 100 µA
Min.
33
Typ.
18
Max.
50
50
150
Unit
V
µA
µA
µA
V
ON (∗)
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS=VGS ID = 1 mA
-40 < Tj < 150 oC
Static Drain-source On VGS = 10V ID = 40 A
Resistance
VGS = 16V ID = 40 A
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
1.7
Typ.
3
Max.
4.2
Unit
V
8
9
mΩ
7.5
8
mΩ
80
A
DYNAMIC
Symbo l
gfs (∗)
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID =40 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
30
Typ.
50
Max.
Unit
S
4000 5400 pF
1250 1700 pF
230 320
pF
2/8
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