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NTE2385 Просмотр технического описания (PDF) - NTE Electronics

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NTE2385 Datasheet PDF : 3 Pages
1 2 3
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DraintoSource Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static DraintoSource OnResistance
Gate Threshold Voltage
V(BR)DSS
V(BR)DSS
TJ
RDS(on)
VGS(th)
VGS = 0V, ID = 250µA
Reference to +25°C, ID = 1mA
VGS = 10V, ID = 4.8A, Note 4
VDS = VGS, ID = 250µA
500
V
0.78 V/°C
– – 0.85
2.0 4.0 V
Forward Transconductance
DraintoSource Leakage Current
GatetoSource Forward Leakage
GatetoSource Reverse Leakage
gfs
VDS = 50V, ID = 4.8A, Note 4
4.9
mhos
IDSS VDS = 500V, VGS = 0V
– – 25 µA
VDS = 400V, VGS = 0V, TJ = +125°C
250 µA
IGSS VGS = 20V
– – 100 nA
IGSS VGS = 20V
– – –100 nA
Total Gate Charge
GatetoSource Charge
GatetoDrain (Miller) Charge
TurnOn Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
ID = 8A, VDS = 400V, VGS = 10V,
Note 4
VDD = 250V, ID = 8A, RG = 9.1,
RD = 31, Note 4
– – 63 nC
– – 9.3 nC
– – 32 nC
14 ns
23 ns
TurnOff Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
td(off)
49 ns
tf
20 ns
LD
Between lead, .250in. (6.0) mm from 4.5
nH
LS
package and center of die contact
7.5
nH
Input Capacitance
Output Capacitance
Reverse Transfer Capaticance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
1300 pF
310 pF
120 pF
SourceDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS
ISM Note 2
VSD TJ = +25°C, IS = 8A, VGS = 0V,
Note 4
–– 8 A
– – 32 A
– – 2.0 V
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = +25°C, IF = 8A,
Qrr di/dt = 100A/µs, Note 4
460 970 ns
4.2 8.9 µC
Forward TurnOn Time
ton Intrinsic turnon time is neglegible (turnon is dominated by LS+LD)
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width 300µs; duty cycle 2%.

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