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HMC341

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz

Hittite Microwave 

v00.0301

MICROWAVE CORPORATION

Outline Drawing

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

HMC341

GaAs MMIC LOW NOISE

AMPLIFIER, 24 - 30 GHz

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

RF Input Power (RFin)(Vdd = +3.0 Vdc)

Channel Temperature

Continuous Pdiss (T = 85 °C)

(derate 3.44 mW/°C above 85 °C)

Thermal Resistance

(channel to die bottom)

Storage Temperature

Operating Temperature

+5.5 Vdc

+5 dBm

175 °C

0.310 W

290 °C/W

-65 to +150 °C

-55 to +85 °C

1

Pad Descriptions

Pad Number

Function

1

RF Input

2

RF Output

Description

This pad is AC coupled and matched to 50 Ohm from 24 - 30 GHz

This pad is AC coupled and matched to 50 Ohm from 24 - 30 GHz

Interface Schematic

Power Supply for the 2-stage amplifier. An external RF bypass capacitor

3

Vdd

of 100 - 300 pF is required. The bond length to the capacitor should be

as short as possible. The ground side of the capacitor should be con-

nected to the housing ground.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

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