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RMWT11001

11 to 33 GHz Tripler MMIC

Raytheon Company 

Raytheon

RMWT11001

11 to 33 GHz Tripler MMIC

Raytheon Commercial Electronics

Application Information

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion

and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier

should be machined, finished flat, plated with gold over nickel and should be capable of

withstanding 325°C for 15 minutes.

Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen

environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as

RF ground.

These GaAs devices should be handled with care and stored in dry nitrogen environment to

prevent contamination of bonding surfaces. These are ESD sensitive devices and should be

handled with appropriate precaution including the use of wrist grounding straps. All die attach and

wire/ribbon bond equipment must be well grounded to prevent static discharges through the

device.

Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short

as practical allowing for appropriate stress relief. The RF input and output bonds should be

typically 0.012” long corresponding to a typically 2 mil between the chip and the substrate material.

Raytheon reserves the right to update or change specifications without notice.

Tel: 978-684-8663

Fax: 978-684-8646

www.raytheon.com/micro

Revised March 14, 2001

Page 8

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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