NESG2021M16 Просмотр технического описания (PDF) - California Micro Devices => Onsemi

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NESG2021M16

NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR

California Micro Devices => Onsemi 

NESG2021M16

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

SYMBOLS

PARAMETERS

UNITS RATINGS

VCBO Collector to Base Voltage

V

13.0

VCEO Collector to Emitter Voltage V

5.0

VEBO Emitter to Base Voltage

V

1.5

IC

Collector Current

mA

35

PT2

Total Power Dissipation

mW

175

TJ

Junction Temperature

°C

150

TSTG Storage Temperature

°C

-65 to +150

Note:

1. Operation in excess of any one of these parameters may result

in permanent damage.

2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.

ORDERING INFORMATION

PART NUMBER

QUAN-

TITY

SUPPLYING FORM

NESG2021M16-T3-A 10 K pcs

reel

Pin 1 (Collector), Pin 6

(Emitter) face the perfora-

tion side of the tape

OUTLINE DIMENSIONS (Units in mm)

PACKAGE OUTLINE M16

6-PIN LEAD-LESS MINIMOLD

1.0±0.05

0.8+-00..0075

PIN CONNECTIONS

1. Collector 4. Base

2. Emitter 5. Emitter

3. Emitter

6. Emitter

Life Support Applications

These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably

be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and

agree to fully indemnify CEL for all damages resulting from such improper use or sale.

11/13/2003

A Business Partner of NEC Compound Semiconductor Devices, Ltd.

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