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NE685M33

NEC's NPN SILICON TRANSISTOR

California Eastern Laboratories. 

DATA SHEET

NEC's NPN SILICON TRANSISTOR NE685M33

FEATURES

• LOW NOISE:

NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz

• INSERTION POWER GAIN:

|S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

• 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE

ORDERING INFORMATION

PART NUMBER

NE685M33-A

NE685M33-T3-A

QUANTITY

50 pcs (Non reel)

10 kpcs/reel

SUPPLYING FORM

• 8 mm wide embossed taping

• Pin 2 (Base) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

SYMBOL

VCBO

VCEO

VEBO

IC

Ptot Note

Tj

Tstg

RATINGS

9.0

6.0

2.0

30

130

150

−65 to +150

Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB

UNIT

V

V

V

mA

mW

°C

°C

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

California Eastern Laboratories

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