BAW56M Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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BAW56M

Surface mount switching diode

Galaxy Semi-Conductor 

Production specification

Surface mount switching diode

BAW56M

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Symbol

V(BR)R

Forward Voltage

VF

Reverse Leakage Current

IR

Diode Capacitance

CD

Reverse Recovery Time

trr

Min MAX

UNIT Test Condition

75

-

V IR= 2.5μA

0.715

IF=1mA

-

0.855

V

IF=10mA

1.0

IF=50mA

1.25

IF=150mA

-

2.5

μA VR=75V

25

nA VR=20V

-

2

pF VR=0V,f=1MHz

-

4

ns

IF=IR=10mA,

Irr=0.1* IR,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

N009

Rev.A

www.gmesemi.com

2

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