BCW65ALT1 Просмотр технического описания (PDF) - Willas Electronic Corp.
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BCW65ALT1 Datasheet PDF : 3 Pages
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WILLAS
FM120-M+
BC:$LT1 THRU
1.0GA eSUnReFArCaElMPOUuNrTpSCoHsOeTTKTYrBaAnRRsIEisR tRoECrTsIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
ELEC•TLRoICwApLroCfilHe AsuRrAfaCceTEmRoIuSnTteICdSap(TpAlic=a2t5io°nCiunnolersdseor thoerwise noted) (Continued)
optimize boardCshpaaraccet.eristic
Symbol
Min
Typ
ON C•HLAoRwApCoTwEerRlIoSsTs,IChiSgh efficiency.
• High current capability, low forward voltage drop.
•
DC Current Gain
High surge capability.
hFE
• G( IuC=ar1d0r0inµgAfdocr,oVvCeEr=vo1l0taVgdecp)rotection.
35
—
• U( IlCtr=a1h0igmhA-sdpc,eVeCdEs=w1i.t0chVidncg.)
75
—
• S( iICli=co1n00epmiAtadxci,aVl pCEla=n1a.r0cVhdipc,)metal silicon junction.
100
—
SOD-123H
Max
0.146(3.7)
0.130(3.3)
—
220
250
Unit
0.012(0.3) Typ.
—
0.071(1.8)
0.056(1.4)
• L( eICa=d5-0fr0eempAadrct,sVmCEe=et2e.0nVvidrcon) mental standards of
35
—
—
MCoILlle-SctToDr–-E1m95itt0e0r S/2a2tu8ration Voltage
V CE(sat)
Vdc
• R( oICH=S5p0r0odmuActdfco,rIBpa=c5k0inmg Acoddce) suffix "G"
—
0.7
—
H( aIClo=g1e0n0frmeeAdpcro, dIBu=ct1fo0rmpAacdkcin)g code suffix "H"
—
0.3
—
MBeasce–hEamnitteircSaatlurdataiont aVoltage
V BE(sat)
• E( IpCo=xy50:0UmL9A4d-cV, I0B r=a5te0dmflAadmce) retardant
—
Vdc
0.040(1.0)
—
2.0
0.024(0.6)
SMSM• ACaLsLe–:SMIGoNldAedLpClaHsAticR,ASCOTDE-1R2I3SHTICS
y •
TCeurrmreinnta–Glsa:iPnl—ateBdantedrwmidinthaPlsr,osdoucldt erable
(I C = 20mAdMc,eVthCoEd=21002V6 dc, f = 100 MHz)
per
,
M
I
Lf-
S
T
TD
-
7
5
0
100
0.031(0.8) Typ.
—
0.031(0.8) Typ.
—
MHz
• POoultapruittyC:aIpnadciitcaantceed by cathode band
r •
(V CB= 10 Vdc, I E = 0, f = 1.0
Mounting Position : Any
MHz)
C obo
—
D—imensions in inc1h2es and (millimpeFters)
Input Capacitance
a • W(VeEiBg=ht0:.5AVppdcro, xI iCm=a0te, fd=01.0.011MgHrza)m
C ibo
—
—
80
pF
in Noise FMigAurXe IMUM RATINGS AND ELECTRNIFCAL CHARA—CTERISTICS—
(V CE = 5.0 Vdc, I C = 0.2 mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
RSaWtinIgTsCaHt 2IN5℃G CamHbAieRnAt tCemTEpeRraIStuTreICuSnless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Turn–On Time
For capacitive load, derate current by 20%
(I B1= I B2= 15 mAdc)
t on
—
—
10
dB
100
ns
lim Turn–Off TimReATINGS
Marking Co(IdCe= 150 mAdc, R L = 150 Ω )
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
t off 12
13 — 14
15— 16 40018
1n0s
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200
MaOximrdumeRriMnSgVoInltafgoe rmation
VRMS
14
21
28
35
42
56
70
105
140
e Maximum DCDeBvloicceking Voltage Marking
ShVipDpCing 20
30
40
50
60
80
100
150
200
r MaximuBmCWAv6e5raAgLeTF1orward RectiEfieAd Current
3000/TaIpOe&Reel
1.0
P Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
CJ
TJ
TSTG
-55 to +125
120
- 65 to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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