D667 Просмотр технического описания (PDF) - Unspecified

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D667

TRANSISTOR (NPN)

Unspecified 

2SD667,2SD667A TRANSISTOR (NPN)

FEATURES

z Low frequency power amplifier

z Complementary pair with 2SB647/A

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector- Base Voltage

Collector-Emitter Voltage 2SD667

2SD667A

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

120

80

100

5

1

900

150

-55-150

Units

V

V

V

A

mW

℃

℃

TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

CLASSIFICATION OF hFE(1)

Rank

Range

2SD667

2SD667A

Symbol Test conditions

V(BR)CBO IC=10μA,IE=0

V(BR)CEO IC=1mA,IB=0

V(BR)EBO

ICBO

IEBO

IE=10μA,IC=0

VCB=100V,IE=0

VEB=4V,IC=0

hFE(1) VCE=5V,IC=150mA

hFE(2)

VCE(sat)

VBE

fT

Cob

VCE=5V,IC=500mA

IC=500mA,IB=50mA

VCE=5V,IC=150mA

VCE=5V,IC=150mA

VCB=10V,IE=0,f=1MHz

2SD667

2SD667A

2SD667

2SD667A

MIN

120

80

100

5

60

60

30

B

60-120

60-120

C

100-200

100-200

TYP

MAX

10

10

320

200

UNIT

V

V

V

V

μA

μA

1

V

1.5

V

140

MHz

12

pF

D

160-320

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