D882 Просмотр технического описания (PDF) - Willas Electronic Corp.

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D882

SOT-89 Plastic-Encapsulate Transistors

Willas Electronic Corp. 

WILLAS

SO1.0TA-S8U9RFPAlCaEsMtOicUN-ET SnCcHaOpTTsKuY BlaAtReRIETRrRaEnCsTIiFsIEtRoSr-s20V- 200V

SOD-123+ PACKAGE

FM120-M+

D882 THRU

FM1200-M

Pb Free Produc

Features

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

TRANSISTOoRpti(mNizPeNb)oard space.

• Low power loss, high efficiency.

FEATURE•SHigh current capability, low forward voltage drop.

Power •diHsisgihpsautirogne capability.

Pb-Free pa•• cUGklutaraargdheriignihgs-sfoaprveoeavdielsarvwboitllcteahginegp. rotection.

RoHS prod•uScilticfoonr eppaitcakxiinalgplcaondarechsiupf,fmixe”taGl ”silicon junction.

Halogen fre• eLepardo-fdreuecpt afortsr mpaeectkeinngvircoonmdeenstaulfsfitxan“dHa”rds of

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

Package outline

SOD-123H

SOT-89

0.146(3.7)

0.130(3.3)

1. BASE

2. COLLECTOR

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

Mechanical data

MAXIMU•MEpRoxAyT: IUNLG94S-V(0Traa=te2d5f℃lamuenrleetasrsdaonttherwise noted)

• Case : Molded plastic, SOD-123H

Symbol • Terminals :PlPaaterdamteermteirnals, solderable pVearluMeIL-STDU-7n5it0,

3. EMITTER

0.031(0.8) Typ.

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

VCBO

Collector-MBeatsheodV2o0lta2g6e

40

V

VCEO

• PoClaorllietyct:oInr-dEicmaittetedr bVyocltaatgheode band

30

V

VEBO

• MEoumnittitnegr-PBoassietioVnol:tAagney

6

V

• Weight : Approximated 0.011 gram

IC

Collector Current -Continuous

3

A

Dimensions in inches and (millimeters)

PC

ColleMctAorXPIMowUeMr DRisAsTipIaNtiGonS AND EL0E.C5 TRICALWCHARACTERISTICS

TJ Ratings at 2J5u℃nctaiomnbTieenmt tpeemrpaeturareture unless otherwis1e5s0pecified. ℃

Single phase half wave, 60Hz, resistive of inductive load.

TstgFor capacitSivteorloaagde, dTeermatpeecruartruernet by 20%

-55~150

℃

RATINGS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M

Marking Code

12

13

14

15

16

ELEMCaTximRuImCAReLcuCrreHntAPReaAk CReTveErsReIVSoTltaIgCeS(Ta=

Maximum RMS Voltage

25℃VVRRuMRnMS less21o04therw32i01se

spe4208cified53) 05

60

42

18

10

115 120

80

100

150

200

56

70

105

140

MaximumPDaCraBmlocektinegr Voltage

Maximum Average Forward Rectified Current

Collector-base breakdown voltage

SymboVlDC

IO

V(BR)CBO

ColPleeacktoFor-rweamrditStuerrgebCreurarekndt o8.w3 mnsvsoinlgtaleghealf sine-wVav(eBR)CEIFOSM

superimposed on rated load (JEDEC method)

EmTitytpeicr-abl TahseermbarleRaeksdisotawncne v(Nooltteag2)e

V(BR)ERBOΘJA

ColTleypcitcoalrJcuunctt-ionffCcauprarceitanntce (Note 1)

ICBO CJ

ColOlepcetraotrincguTte-mopffercauturrreeRnatnge

Storage Temperature Range

Emitter cut-off current

ICEO TJ

TSTG

IEBO

T2e0st con3d0itions 40

IC = 100μA, IE=0

IC = 10mA, IB=0

IE= 100μA, IC=0

VCB= 40V, IE=0

VCE= 30V-5,5IBto=0+125

VEB= 6V, IC=0

5M0 in 60 Typ 80 Max100 Unit150

200

1.0

40

V

30

30

V

6

40

V

120

1

µA

- 65 to +175

-5150to +150 µA

1

µA

CHARACTERISTICS

hFES(1Y) MBOL FVMC1E2=0-2MVH, FICM=1310-AMH FM140-MH FM15600-MH FM160-MH FM180-MH4F0M01100-MH FM1150-MH FM1200-MH

DCMcauxrimreunmtFgoarwinard Voltage at 1.0A DC

hFE(2)VF VCE=2V, IC= 1000m.50A

320.70

0.85

0.9

0.92

Maximum Average Reverse Current at @T

ColRleactetdoDr-CemBloitctkeinrgsVaotlutargaetion voltage@T

AA==12255℃℃VCE(sat)IR

IC= 2A, IB= 0.2 A

0.5

10

0.5

V

Base-emitter saturation voltage

NOTES:

VBE(sat)

IC= 2A, IB= 0.2 A

Tra1n- sMietaiosunrefdreatq1uMeHnZcyand applied reverse voltage of 4.0 VfDT C.

VCE= 5V , Ic=0.1A

50

2- Thermal Resistance From Junction to Ambient

f =10MHz

1.5

V

MHz

CLASSIFICATION OF hFE(1)

Rank

R

20R1a2n-0g6e

60-120

2012-0

O

100-200

Y

160-320

GR

WILLAS20E0L-4E0C0TRONIC COR

WILLAS ELECTRONIC CORP.

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