S8050 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
Номер в каталоге
Компоненты Описание
Список матч
S8050 Datasheet PDF : 4 Pages
| |||
JCET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
S8050 TRANSISTOR (NPN)
SOT-23
FEATURES
z Complimentary to S8550
z Collector Current: IC=0.5A
MARKING: J3Y
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
40
25
5
500
300
417
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO = IC=1mA, IB 0
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
Collector cut-off current
ICBO
V= CB=40 V , IE 0
Collector cut-off current
ICEO
= VCB= 20V , I E 0
Emitter cut-off current
IEBO
= VEB= 5V , IC 0
DC current gain
hFE(1)
hFE(2)
VCE= 1V, I C= 50mA
VCE= 1V, I C= 500mA
Collector-emitter saturation voltage
VCE(sat)
IC=500 mA, IB= 50mA
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=500 mA, IB= 50mA
VCE= 6V, I C= 20mA
f=30MHz
CLASSIFICATION OF hFE(1)
Rank
Range
L
120-200
H
200-350
www.cj-elec.com
1
Min
Typ
40
25
5
120
50
150
Max Unit
V
V
V
0.1 μA
0.1 μA
0.1 μA
400
0.6
V
1.2
V
MHz
J
300-400
DA,JOucnt,2014
Share Link: 