BTC9013A3-0-BK-G Просмотр технического описания (PDF) - Cystech Electonics Corp.

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Компоненты Описание

производитель

BTC9013A3-0-BK-G

General Purpose NPN Epitaxial Planar Transistor

Cystech Electonics Corp. 

CYStech Electronics Corp.

Spec. No. : C203A3

Issued Date : 2014.02.17

Revised Date : 2014.02.24

Page No. : 3/8

Typical Characteristics

0.2

0.18

0.16

0.14

0.12

0.1

0.08

0.06

0.04

0.02

0

0

Emitter Grounded Output Characteristics

1mA

500uA

400uA

300uA

200uA

IB=100uA

1

2

3

4

5

6

VCE, Collector-to-Emitter Voltage(V)

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0

Emitter Grounded Output Characteristics

5mA

2.5mA

2mA

1.5mA

1mA

IB=500uA

1

2

3

4

5

6

VCE, Collector-to-Emitter Voltage(V)

1.2

1

0.8

0.6

0.4

0.2

0

0

Emitter Grounded Output Characteristics

20mA

10mA

8mA

6mA

4mA

IB=2mA

1

2

3

4

5

6

VCE, Collector-to-Emitter Voltage(V)

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

0

Emitter Grounded Output Characteristics

50mA

25mA

20mA

15mA

10mA

IB=5mA

1

2

3

4

5

6

VCE, Collector-to-Emitter Voltage(V)

Current Gain vs Collector Current

1000

Tj=75°C

Tj=125°C

Current Gain vs Collector Current

1000

Tj=75°C

Tj=125°C

100

Tj=25°C Tj=0°C

Tj=-40°C

10

1

VCE=1V

10

100

IC, Collector Current(mA)

BTC9013A3

100

Tj=25°C

Tj=0°C

Tj=-40°C

1000

10

1

VCE=2V

10

100

IC, Collector Current(mA)

1000

CYStek Product Specification

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