BR24G1MNUX-3AE2(2013) Просмотр технического описания (PDF) - ROHM Semiconductor

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BR24G1MNUX-3AE2
(Rev.:2013)

Serial EEPROM Series Standard EEPROM I2C BUS EEPROM (2-Wire)

ROHM Semiconductor 

BR24Gxxx-3A (128K 256K 1M)

Datasheet

2. Notes on Write Cycle Continuous Input

List of numbers of page write

Number of

Pages

64Byte

256Byte

Product

number

BR24G128-3A

BR24G256-3A BR24G1M-3A

The above numbers are maximum bytes for respective types.

Any bytes below these can be written.

In the case BR24G256-3A, 1 page=64bytes, but the page

write cycle time is 5ms at maximum for 64byte bulk write.

It does not stand 5ms at maximum × 64byte=320ms(Max)

3. Internal Address Increment

Page write mode (in the case of BR24G128-3A）

WA7 WA6 WA5 WA4 WA3 WA2 WA1 WA0

00000000

00000001

00000010

Increment

3Eh 0

0

0

0111110

0111111

0000000

For example, when it is started from address 3Eh,

then, increment is made as below,

3Eh→3Fh→00h→01h･･･ please take note.

Significant bit is fixed.

No digit up

※3Eh･･･3E in hexadecimal, therefore, 00111110 becomes a

binary number.

4. Write Protect (WP) Terminal

Write protect (WP) function

When WP terminal is set at Vcc (H level), data rewrite of all addresses is prohibited. When it is set GND (L level), data

rewrite of all address is enabled. Be sure to connect this terminal to Vcc or GND, or control it to H level or L level. Do

not leave it open.

In case of using it as ROM, it is recommended to connect it to pull up or Vcc. At extremely low voltage at power

ON/OFF, by setting the WP terminal ‘H’, write error can be prevented.

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© 2013 ROHM Co., Ltd. All rights reserved.

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25.Feb.2013 Rev.002

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