SI4599DY Просмотр технического описания (PDF) - Unspecified

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SI4599DY

N-Chanel and P-Channel MOSFET use advanced trench technology

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Typical Characteristics： (TC=25℃ unless otherwise noted)

Si4599DY

TC , Case Temperature (℃)

Fig.1 Continuous Drain Current vs. TC

TJ , Junction Temperature (℃)

Fig.2 Normalized RDSON vs. TJ

TJ , Junction Temperature (℃)

Fig.3 Normalized Vth vs. TJ

Qg , Gate Charge (nC)

Fig.4 Gate Charge Waveform

Square Wave Pulse Duration (s)

Fig.5 Normalized Transient Impedance

VDS , Drain to Source Voltage (V)

Fig.6 Maximum Safe Operation Area

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