BT131-800D Просмотр технического описания (PDF) - WeEn Semiconductors
Номер в каталоге
Компоненты Описание
Список матч
BT131-800D Datasheet PDF : 13 Pages
| |||
WeEn Semiconductors
BT131-800D
4Q Triac
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
VT
on-state voltage
IT = 1.4 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
ID
off-state current
Dynamic characteristics
VD = 800 V; Tj = 125 °C
dVD/dt
dVcom/dt
rate of rise of off-state
voltage
rate of change of
commutating voltage
VDM = 536 V; Tj = 125 °C; (VDM =
67% of VDRM); exponential waveform;
RGT1(ext) = 1 kΩ
VD = 400 V; Tj = 125 °C; dIcom/
dt = 0.5 A/ms; IT = 1 A; gate open
circuit
tgt
gate-controlled turn-on ITM = 1.5 A; VD = 800 V; IG = 0.1 A; dIG/
time
dt = 5 A/µs
Min Typ Max Unit
-
-
5
mA
-
-
5
mA
-
-
5
mA
-
-
7
mA
-
-
10
mA
-
-
20
mA
-
-
10
mA
-
-
10
mA
-
1.3 10
mA
-
1.2 1.5 V
-
0.7 1
V
0.2 0.3 -
V
-
0.1 0.5 mA
20
-
-
V/µs
3
-
-
V/µs
-
2
-
µs
BT131-800D
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 October 2016
© WeEn Semiconductors Co., Ltd. 2016. All rights reserved
7 / 13
Share Link: 