FDB2532 Просмотр технического описания (PDF) - TY Semiconductor
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FDB2532 Datasheet PDF : 2 Pages
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SMD Type
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Symbol
VDSS
Drain cut-off current
IDSS
Gate leakage current
Gate threshold voltage
IGSS
VGS(th)
Drain to source on-state resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain "Miller" Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Reverse Recovery Time
Reverse Recovered Charge
Source to Drain Diode Voltage
Ciss
Coss
Crss
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
tON
td(ON)
tr
td(OFF)
tf
tOFF
trr
QRR
VSD
Testconditons
ID=250ìA VGS=0V
VDS=120V,VGS=0
VDS=120V,VGS=0,TC=150
VGS= 20V
VDS = VGS, ID = 250ìA
VGS=10V,ID=33A
VGS=6V,ID=16A
VGS=10V,ID=33A,TC=175
VDS=25V,VGS=0,f=1MHZ
VGS = 0V to 10V
VGS = 0V to 2V
VDS = 75V,
Ig=1.0mA
ID = 33A
VDD = 75V, ID = 33A
VGS = 10V, RGS = 3.6
ISD = 33A, diSD/dt = 100A/ìs
ISD = 33A, diSD/dt = 100A/ìs
ISD = 33A
ISD = 16A
Product specification
KDB2532(FDB2532)
Min Typ Max Unit
150
V
1
A
250
100 nA
2.0
4.0 V
0.014 0.016
0.016 0.024 Ù
0.040 0.048
5870
pF
615
pF
135
pF
82 107 nC
11 14 nC
23
nC
13
nC
19
nC
69 ns
16
ns
30
ns
39
ns
17
ns
84 ns
105 ns
327 nC
1.25 V
1.0 V
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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