LL46-GS08 Просмотр технического описания (PDF) - Vishay Semiconductors
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LL46-GS08 Datasheet PDF : 4 Pages
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LL46
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Reverse breakdown voltage
Leakage current (1)
Forward voltage (1)
Diode capacitance
IR = 100 μA (pulsed)
VR = 1.5 V
VR = 1.5 V, Tj = 60 °C
VR = 10 V
VR = 10 V, Tj = 60 °C
VR = 50 V
VR = 50 V, Tj = 60 °C
VR = 75 V
VR = 75 V, Tj = 60 °C
IF = 0.1 mA
IF = 10 mA
IF = 250 mA
VR = 0 V, f = 1 MHz
VR = 1 V, f = 1 MHz
V(BR)
100
IR
IR
IR
IR
IR
IR
IR
IR
VF
VF
VF
CD
CD
Note
(1) Pulse test tp < 300 μs, δ < 2 %
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
250
Tj = 60 °C
100
200
TYP.
10
6
MAX.
0.5
5
0.8
7.5
2
15
5
20
250
450
1000
UNIT
V
μA
μA
μA
μA
μA
μA
μA
μA
mV
mV
mV
pF
pF
10
150
25 °C
1
100
0.1
0.01
0
0.2 0.4 0.6 0.8
1 1.2
18546
VF - Forward Voltage (V)
Fig. 1 - Typical Instantaneous Forward Characteristics
50
0
0 20 40 60 80 100 120 140
Tamb - Ambient Temperature (°C)
20081
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
100
10
Tj = 60 °C
1
0.1
Tj = 25 °C
0.01
0
20
40
60
80
100
18547
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Characteristics
Rev. 1.7, 01-Jun-17
2
Document Number: 85673
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