AUDIO FREQ UENCY PO WER AMPLIFIER
• MEDIUM SPEED SWITCHING
PJD1616C
NPN Epitaxial Silicon Transistor
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃ )
Characteristic
Symbol Rating Unit
Collector-base Voltage
Collector-Emitter Voltage
Emitter-base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation TO-92
SOT -
23
Junction Temperature
Storage Temperature
VCBO
120
V
VCEO
60
V
VEBO
6
V
IC
0.5
A
IC
1
A
PD
0.75
W
PD
0.3
W
TJ
150
℃
Tstg -55~150 ℃
• PW≤10ms, Duty Cycle≤50%
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Pin :
1. Emitter
2. Colletor
3. Base
Pin :
1. Base
2. Emitter
3. Colletor
ORDERING INFORMATION
Device
PJD1616CCT
PJD1616CCX
Operating Operature
-20℃~+85℃
Package
T O-92
SOT -23
C h aracte ri s ti c
Collector Cutoff Current
Emitter Cutoff Current
*DC Current Gain
**Base Emitter On Voltage
*Collector Emitter Saturation Voltage
*Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
S y m bo l
ICBO
IEBO
hFE1
hFE2
VBE (on)
VCE (sat)
VBE (sat)
COb
fT
Te st Condition
VCB=60V,IE=0
VEB=6V,IC=0
VCE=2V,IC=50mA
VCE=2V,IC=0.5A
VCE=2V,IC=20mA
IC=400mA,IB=40mA
IC=500mA,IB=50mA
VCB=10V,IE=0,f=1MHz
VCE=2V,IC=100mA
Turn On Time
ton
Storage Time
ts
Fall Time
tf
• Pulse Test:PW≤350μs, Duty Cycle≤2%
hFE(1) CLASSIFICATION
VCC=10V,IC=100mA
IB1= -IB2=10mA
VBE(off)= -2~-3V
Min Typ Max Unit
100
nA
100
nA
135
400
81
600
640
700
mV
0.15
0.3
V
0.9
1.2
V
19
pF
100
160
MHz
0.07
μs
0.95
μs
0.07
μs
Classification
hFE(1)
Y
135-270
G
200-400
L
300-600
1-4
2002/01.rev.A