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PJD1616CCT

NPN Epitaxial Silicon Transistor

Promax Johnton 

AUDIO FREQ UENCY PO WER AMPLIFIER

• MEDIUM SPEED SWITCHING

PJD1616C

NPN Epitaxial Silicon Transistor

TO-92

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta = 25℃ )

Characteristic

Symbol Rating Unit

Collector-base Voltage

Collector-Emitter Voltage

Emitter-base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Collector Dissipation TO-92

SOT -

23

Junction Temperature

Storage Temperature

VCBO

120

V

VCEO

60

V

VEBO

6

V

IC

0.5

A

IC

1

A

PD

0.75

W

PD

0.3

W

TJ

150

℃

Tstg -55~150 ℃

• PW≤10ms, Duty Cycle≤50%

ELECTRICAL CHARACTERISTICS(Ta=25℃)

Pin :

1. Emitter

2. Colletor

3. Base

Pin :

1. Base

2. Emitter

3. Colletor

ORDERING INFORMATION

Device

PJD1616CCT

PJD1616CCX

Operating Operature

-20℃～+85℃

Package

T O-92

SOT -23

C h aracte ri s ti c

Collector Cutoff Current

Emitter Cutoff Current

*DC Current Gain

**Base Emitter On Voltage

*Collector Emitter Saturation Voltage

*Base Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Product

S y m bo l

ICBO

IEBO

hFE1

hFE2

VBE (on)

VCE (sat)

VBE (sat)

COb

fT

Te st Condition

VCB=60V,IE=0

VEB=6V,IC=0

VCE=2V,IC=50mA

VCE=2V,IC=0.5A

VCE=2V,IC=20mA

IC=400mA,IB=40mA

IC=500mA,IB=50mA

VCB=10V,IE=0,f=1MHz

VCE=2V,IC=100mA

Turn On Time

ton

Storage Time

ts

Fall Time

tf

• Pulse Test:PW≤350μs, Duty Cycle≤2%

hFE(1) CLASSIFICATION

VCC=10V,IC=100mA

IB1= -IB2=10mA

VBE(off)= -2~-3V

Min Typ Max Unit

100

nA

100

nA

135

400

81

600

640

700

mV

0.15

0.3

V

0.9

1.2

V

19

pF

100

160

MHz

0.07

μs

0.95

μs

0.07

μs

Classification

hFE(1)

Y

135-270

G

200-400

L

300-600

1-4

2002/01.rev.A

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