VG36646141BT-10 Просмотр технического описания (PDF) - Vanguard International Semiconductor

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VG36646141BT-10

CMOS Synchronous Dynamic RAM

Vanguard International Semiconductor  

VIS

Preliminary

VG36641641BT

CMOS Synchronous Dynamic RAM

Absolute Maximum D.C. Ratings

Parameter

Symbol

Value

Unit

Voltage on any pin relative to Vss

VIN, VOUT

-0.5 to + 4.6

V

Supply voltage relative to Vss

VDD, VDDQ

-0.5 to + 4.6

V

Short circuit output current

IOUT

50

mA

Power dissipation

PD

1.0

W

Operating temperature

TOPT

0 to + 70

°C

Storage temperature

TSTG

-55 to + 125

°C

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

peumanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Maximum A.C. Operating Requirements for LVTTL Compatible

Parameter

Symbol

Min

Max

Unit

Input High Voltage

VIH

2.0

VDDQ + 2.0

V

Input Low Voltage

VIL

VSSQ -2.0

0.8

V

Notes

2

2

Recommended DC Operating Conditions for LVTTL Compatible

Parameter

Symbol

Min

Typ

Supply Voltage

Input High Voltage, all inputs

Input Low Voltage, all inputs

VDD, VDDQ

3.0

3.3

VIH

2.0

-

VIL

-0.3

-

Max

Unit

3.6

V

VDD + 0.3

V

0.8

V

Capacitance

(Ta = 25°C, f = 1MHZ)

Parameter

Symbol Min Typ Max Unit

Input capacitance (All input pins except CLK pin)

CLK pin

Cin

CCLK

2.5 3.75 5.0

pF

2.5 3.25 4.0

pF

Data input/output capacitance

CI/O

4.0 5.25 6.5

pF

Notes : 1. Capacitance measured with effective capacitance measuring method.

2. The overshoot and undershoot voltage duration is ≤ 3ns with no input clamp diodes.

Notes

1

1

1

Document : 1G5-0127

Rev2

Page 4

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