CY62146V18-85BAI Просмотр технического описания (PDF) - Cypress Semiconductor

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CY62146V18-85BAI

256K x 16 Static RAM

Cypress Semiconductor 

CY62146V18 MoBL2™

Electrical Characteristics Over the Operating Range

Parameter

Description

VOH

Output HIGH Voltage

VOL

Output LOW Voltage

VIH

Input HIGH Voltage

VIL

Input LOW Voltage

IIX

Input Load Current

IOZ

Output Leakage Current

ICC

VCC Operating Supply

Current

ISB1

Automatic CE

Power-Down Current—

CMOS Inputs

ISB2

Automatic CE

Power-Down Current—

CMOS Inputs

Test Conditions

IOH = –0.1 mA

VCC = 1.75V

IOL = 0.1 mA

VCC = 1.75V

VCC = 1.95V

VCC = 1.75V

GND < VI < VCC

GND < VO < VCC, Output Disabled

IOUT = 0 mA,

f = fMAX = 1/tRC,

CMOS Levels

VCC = 1.95V

IOUT = 0 mA, f = 1 MHz,

CMOS Levels

CE > VCC – 0.3V,

VIN > VCC – 0.3V or

VIN < 0.3V, f = fMAX

CE > VCC – 0.3V

VIN > VCC – 0.3V

or VIN < 0.3V, f = 0

VCC = Std.

1.95V

Min.

1.5

1.4

–0.5

–1

–1

CY62146V18

Typ.[2]

Max.

0.2

VCC + 0.3V

0.4

+1

+1

+1

+1

7

15

1

2

100

20

50

Unit

V

V

V

V

µA

µA

mA

mA

µA

µA

Capacitance[3]

Parameter

CIN

COUT

Description

Input Capacitance

Output Capacitance

Test Conditions

TA = 25°C, f = 1 MHz,

VCC= VCC(typ.)

Max.

6

8

Unit

pF

pF

Thermal Resistance

Description

Test Conditions

Thermal Resistance

(Junction to Ambient)[3]

Still Air, soldered on a 4.25 x 1.125 inch, 4-layer

printed circuit board

Thermal Resistance

(Junction to Case)[3]

Note:

3. Tested initially and after any design or process changes that may affect these parameters.

Symbol

ΘJA

ΘJC

BGA

55

16

Unit

°C/W

°C/W

3

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