TSL2571 Просмотр технического описания (PDF) - austriamicrosystems AG
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TSL2571 Datasheet PDF : 25 Pages
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TSL2571
LIGHT-TO-DIGITAL CONVERTER
TAOS117A − FEBRUARY 2011
Operating Characteristics, VDD = 3 V, TA = 255C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Active
175
250
IDD Supply current
Wait mode
Sleep mode — no I2C activity
65
μA
2.5
4
3 mA sink current
0
0.4
VOL INT, SDA output low voltage
I LEAK Leakage current, SDA, SCL, INT pins
lid VIH SCL, SDA input high voltage
VIL
SCL, SDA input low voltage
6 mA sink current
TSL25711, TSL25715
TSL25713, TSL25717
TSL25711, TSL25715
TSL25713, TSL25717
0
−5
0.7 VDD
1.25
V
0.6
5 μA
V
0.3 VDD
V
0.54
a ALS Characteristics, VDD = 3 V, TA = 255C, Gain = 16, AEN = 1 (unless otherwise noted)
v (Notes 1 ,2, 3)
ill PARAMETER
TEST CONDITIONS
CHANNEL
MIN TYP MAX UNIT
Dark ADC count value
Ee = 0, AGAIN = 120×,
ATIME = 0xDB (100 ms)
CH0
CH1
0
1
0
1
5
counts
5
t ADC integration time step size
ATIME = 0xFF
2.58 2.72
2.9 ms
G s ADC Number of integration steps
1
256 steps
ADC counts per step
ATIME = 0xFF
0
1024 counts
A t ADC count value
ATIME = 0xC0
0
65535 counts
s en ADC count value
λp = 625 nm, Ee = 171.6 μW/cm2,
ATIME = 0xF6 (27 ms) See note 2.
λp = 850 nm, Ee = 219.7 μW/cm2,
ATIME = 0xF6 (27 ms) See note 3.
CH0
CH1
CH0
CH1
4000
4000
5000
790
5000
2800
6000
counts
6000
m t ADC count value ratio: CH1/CH0
a on Re Irradiance responsivity
l c Gain scaling, relative to 1× gain
a setting
λp = 625 nm, ATIME = 0xF6 (27 ms) See note 2.
λp = 850 nm, ATIME = 0xF6 (27 ms) See note 3.
λp = 625 nm, ATIME = 0xF6 (27 ms)
See note 2.
CH0
CH1
λp = 850 nm, ATIME = 0xF6 (27 ms)
See note 3.
8×
CH0
CH1
16×
120×
10.8 15.8
41
56
29.1
4.6
22.8
12.7
−10
−10
−10
20.8
%
68
counts/
(μW/
cm2)
10
10 %
10
NOTES: 1. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 625 nm LEDs
ic and infrared 850 nm LEDs are used for final product testing for compatibility with high-volume production.
2. The 625 nm irradiance Ee is supplied by an AlInGaP light-emitting diode with the following typical characteristics: peak wavelength
λp = 625 nm and spectral halfwidth Δλ½ = 20 nm.
n 3. The 850 nm irradiance Ee is supplied by a GaAs light-emitting diode with the following typical characteristics: peak wavelength
Tech λp = 850 nm and spectral halfwidth Δλ½ = 42 nm.
Copyright E 2011, TAOS Inc.
4
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www.taosinc.com
The LUMENOLOGY r Company
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