STTH2003CT Просмотр технического описания (PDF) - Inchange Semiconductor
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STTH2003CT Datasheet PDF : 2 Pages
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Hight frequency secondary rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
INCHANGE Semiconductor
STTH2003CT
MAX
2.5
UNIT
℃/W
ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
VF
Maximum Instantaneous Forward Voltage IF= 10A ;Tj=25℃
IR
Maximum Instantaneous Reverse Current
VR= VRWM;Tj=125℃
VR= VRWM
trr
Maximum Reverse Recovery Time
IF =1A;
1.25
300
20
35
UNIT
V
μA
ns
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
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