RMWL05001 Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
Список матч
RMWL05001 Datasheet PDF : 7 Pages
| |||
April 2004
RMWL05001
5 GHz Low Noise Amplifier MMIC
General Description
The RMWL05001 is a 2-stage GaAs MMIC amplifier
designed as a 4.7 to 5.2 GHz Low Noise Amplifier for use
in point to point radios, point to multi-point communications,
LMDS, and other millimeter wave applications. In conjunc-
tion with other Fairchild Semiconductor amplifiers, multi-
pliers and mixers it forms part of a complete 38 GHz
transmit/receive chipset. The RMWL05001 utilizes our
0.25µm power PHEMT process and is sufficiently versatile
to serve in a variety of low noise amplifier applications.
Features
• Single positive supply operation
• 4 mil substrate
• Noise figure 1.4dB (typ.)
• Small-signal gain 18dB (typ.)
• 1dB compressed Pout 14dBm (typ.)
• Chip size 2.0mm x 1.15mm
Device
Absolute Ratings
Symbol
Vd
ID
PIN
TC
Tstg
RJC
Parameter
Positive DC Voltage (+4V Typical)
Positive DC Current
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
113
+8
-30 to +85
-55 to +125
112
Electrical Characteristics (At 25°C), 50Ω system, Vd = +4V, Single Bias Supply
Parameter
Frequency Range
Noise Figure
Gain Small Signal at Pin = -20dBm
Gain Variation vs. Frequency
Gain at 1dB Compression
Power Output at 1dB Compression
Drain Current at Pin = -20dBm
Input Return Loss (Pin = -15dBm)
Output Return Loss (Pin = -15dBm)
Min
Typ
Max
4.7
5.2
1.4
2.3
14
18
20
1
17
14
50
15
15
Units
V
mA
dBm
°C
°C
°C/W
Units
GHz
dB
dB
dB
dB
dBm
mA
dB
dB
©2004 Fairchild Semiconductor Corporation
RMWL05001 Rev. B
Share Link: 